onsemiTIP32BGGP BJT

Trans GP BJT PNP 80V 3A 2000mW 3-Pin(3+Tab) TO-220AB Tube

Use this versatile PNP TIP32BG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.