| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 230 | |
| 230 | |
| 5 | |
| 3@0.8A@8A | |
| 15 | |
| 35@7A@5V|80@1A@5V | |
| 150000 | |
| 30(Typ) | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Height | 26 |
| Package Width | 5 |
| Package Length | 20 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3PL |
| 3 | |
| Lead Shape | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP TTA1943(Q) general purpose bipolar junction transistor, developed by Toshiba, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |