Diodes IncorporatedZXT849KTCGP BJT
Trans GP BJT NPN 30V 7A 4200mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 2.39(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZXT849KTC GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 4200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |