Diodes IncorporatedZXTP08400BFFTAGP BJT

Trans GP BJT PNP 400V 0.2A 2000mW 3-Pin SOT-23F T/R

This specially engineered PNP ZXTP08400BFFTA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.