Diodes IncorporatedZXTP19020DZTAGP BJT
Trans GP BJT PNP 20V 6A 26700mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 25 | |
| 20 | |
| 4 | |
| 1.1@300mA@6A | |
| 0.047@100mA@1A|0.13@10mA@1A|0.145@40mA@2A|0.275@300mA@6A | |
| 6 | |
| 300@100mA@2V|200@2A@2V|65@6A@2V | |
| 26700 | |
| 176(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 mm |
| Package Width | 2.5 mm |
| Package Length | 4.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
If you require a general purpose BJT that can handle high voltages, then the PNP ZXTP19020DZTA BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 4460 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 4 V.
| EDA / CAD Models |