Diodes IncorporatedZXTP19060CFFTAGP BJT
Trans GP BJT PNP 60V 4A 2000mW 3-Pin SOT-23F T/R
EAR99 | |
Active | |
8541.29.00.75 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Power | |
Single | |
1 | |
60 | |
60 | |
7 | |
1.05@400mA@4A | |
0.075@100mA@1A|0.2@20mA@1A|0.27@400mA@4A | |
4 | |
200@100mA@2V|160@1A@2V|30@4A@2V | |
2000 | |
180(Typ) | |
-55 | |
150 | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 1(Max) mm |
Package Width | 1.7(Max) mm |
Package Length | 3(Max) mm |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23F |
3 |
Add switching and amplifying capabilities to your electronic circuit with this PNP ZXTP19060CFFTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.