| Compliant | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 1.25(Max) mm |
| Largeur du paquet | 1.65(Max) mm |
| Longueur du paquet | 3.05(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SC-59 |
| 3 | |
| Forme de sonde | Gull-wing |
Implement this versatile NPN 15GN01CA-TB-E GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 3 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 8 V and a maximum emitter base voltage of 3 V.
| EDA / CAD Models |