GeneSiC Semiconductor1N8030-GARectifiers
Diode Schottky 650V 0.75A 3-Pin(3+Tab) TO-257 Isolated
| Compliant with Exemption | |
| EAR99 | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| 5 | |
| Single | |
| Active | |
| -55 | |
| -55 to 210 | |
| 0.75 | |
| 1.4(Typ) | |
| 210 | |
| Installation | Through Hole |
| Hauteur du paquet | 16.89(Max) |
| Largeur du paquet | 5.08(Max) |
| Longueur du paquet | 10.67(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-257 Isolated |
| 3 | |
| Forme de sonde | Through Hole |
Switch from an AC voltage to a DC voltage using a Schottky diode 1N8030-GA rectifier from GeneSiC Semiconductor. Its maximum power dissipation is 24000 mW. Its peak non-repetitive surge current is 10 A, while its maximum continuous forward current is 0.75 A. This rectifier has a minimum operating temperature of -55 °C and a maximum of 250 °C. It is made in a single configuration.
| EDA / CAD Models |