| Not Compliant | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 1.3@15mA@150mA|2.6@50mA@500mA | |
| 0.4@15mA@150mA|1.6@50mA@500mA | |
| 0.6 | |
| 100@10mA@10V|100@150mA@10V|100@1mA@10V|50@500mA@10V|75@0.1mA@10V | |
| 500 | |
| -65 | |
| 200 | |
| Waffle |
The PNP 2N2907AUB general purpose bipolar junction transistor, developed by Microsemi, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
| EDA / CAD Models |