Central Semiconductor2N5823 TIN/LEADGP BJT
Trans GP BJT PNP 60V 0.75A 3-Pin TO-92-18R
| Not Compliant | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 70 | |
| 60 | |
| 5 | |
| 1.2@50mA@500mA | |
| 0.75@50mA@500mA | |
| 0.75 | |
| 100 | |
| 100@2mA@2V|25@500mA@2V | |
| 625 | |
| -65 | |
| 150 | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.21(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92-18R |
| 3 |
Compared to other transistors, the PNP 2N5823 TIN/LEAD general purpose bipolar junction transistor, developed by Central Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |