onsemi2N6045GDarlington BJT
Trans Darlington NPN 100V 8A 75000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 9.28(Max) |
| Largeur du paquet | 4.83(Max) |
| Longueur du paquet | 10.53(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
ON Semiconductor brings you their latest NPN 2N6045G Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@3A@4 V|100@8A@4V. It has a maximum collector emitter saturation voltage of 2@12mA@4A|4@80mA@8A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4.5@80mA@8A V. Its maximum power dissipation is 75000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |