Central Semiconductor2N6294 PBFREEDarlington BJT
Trans Darlington NPN 60V 4A 50000mW 3-Pin(2+Tab) TO-66
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
60 | |
60 | |
5 | |
4@40mA@4A | |
4 | |
2@8mA@2A|3@40mA@4A | |
4(Min) | |
100@4A@3V|750@2A@3V | |
50000 | |
-65 | |
200 | |
Installation | Through Hole |
Hauteur du paquet | 8.64(Max) |
Largeur du paquet | 17.52 |
Longueur du paquet | 24.48(Max) + 7.16 |
Carte électronique changée | 2 |
Onglet | Tab |
Nom de lemballage standard | TO |
Conditionnement du fournisseur | TO-66 |
3 |
Are traditional transistors not providing enough of a current gain? The NPN 2N6294 PBFREE Darlington transistor from Central Semiconductor can help. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. Its maximum power dissipation is 50000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 200 °C.