| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Single Dual Gate | |
| Depletion | |
| N | |
| 1 | |
| 15 | |
| ±8 | |
| 0.03 | |
| 50 | |
| 2.7@6V | |
| 0.015@6V | |
| 200 | |
| 21 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 4 |
| Conditionnement du fournisseur | CP |
| 4 |
By using a combination of metal-oxide-semiconductor technology, this 3SK263-5-TG-E RF amplifier from ON Semiconductor can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. This N channel RF power MOSFET operates in depletion mode.
| EDA / CAD Models |