Infineon Technologies AGBC846PNH6327XTSA1GP BJT
Trans GP BJT NPN/PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| BC846PNH6327XTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9(Max) |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-363 |
| 6 | |
| Forme de sonde | Gull-wing |
Compared to other transistors, the npn and PNP BC846PNH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |