Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | No |
PPAP | No |
PNP | |
Bipolar Small Signal | |
Single | |
1 | |
80 | |
65 | |
5 | |
1.1@5mA@100mA | |
0.5@5mA@100mA | |
0.1 | |
15 | |
125@2mA@5V | |
200 | |
100 | |
-55 | |
150 | |
Tape and Reel | |
Installation | Surface Mount |
Hauteur du paquet | 1.1(Max) |
Largeur du paquet | 1.4(Max) |
Longueur du paquet | 3(Max) |
Carte électronique changée | 3 |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-23 |
3 | |
Forme de sonde | Gull-wing |
The three terminals of this PNP BC856A RF GP BJT from Taiwan Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.