Infineon Technologies AGBC860BWH6327XTSA1GP BJT
Trans GP BJT PNP 45V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9(Max) |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-323 |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to other transistors, the PNP BC860BWH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |