Infineon Technologies AGBCR108E6327HTSA1BJT numérique
Trans Digital BJT NPN 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 70@5mA@5V | |
| 170 | |
| 2.2 | |
| 0.3@0.5mA@10mA | |
| 0.047 | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
The NPN BCR108E6327HTSA1 digital transistor from Infineon Technologies is your alternative to traditional BJTs in that it can provide digital signal processing power. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |