Infineon Technologies AGBCR158E6327HTSA1BJT numérique

In contrast to traditional transistors, Infineon Technologies' PNP BCR158E6327HTSA1 digital transistor's can be used in a wide variety of digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.