Infineon Technologies AGBCR183E6433HTMA1BJT numérique
Trans Digital BJT PNP 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Single | |
| 50 | |
| 100 | |
| 30@5mA@5V | |
| 200 | |
| 10 | |
| 0.3@0.5mA@10mA | |
| 1 | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
The PNP BCR183E6433HTMA1 digital transistor from Infineon Technologies is your alternative to traditional BJTs in that it can provide digital signal processing power. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |