Infineon Technologies AGBCR35PNH6327XTSA1BJT numérique
Trans Digital BJT NPN/PNP 50V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN|PNP | |
| Dual | |
| 50 | |
| 100 | |
| 70@5mA@5V | |
| 150 | |
| 10 | |
| 0.3@0.5mA@10mA | |
| 0.21 | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9(Max) |
| Largeur du paquet | 1.25 |
| Longueur du paquet | 2 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-363 |
| 6 | |
| Forme de sonde | Gull-wing |
If you require the digital form of a traditional BJT for your signal processing needs, then the npn and PNP BCR35PNH6327XTSA1 digital transistor from Infineon Technologies is for you. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |