Infineon Technologies AGBCR512E6327HTSA1BJT numérique
Trans Digital BJT NPN 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Single | |
| 50 | |
| 500 | |
| 60@50mA@5V | |
| 100 | |
| 4.7 | |
| 0.3@2.5mA@50mA | |
| 1 | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Look no further than Infineon Technologies' NPN BCR512E6327HTSA1 digital transistor's, the ideal component to use when designing a digital signal processing unit. This product's maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 60@50mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@2.5mA@50mA V. Its maximum power dissipation is 330 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |