| Compliant | |
| EAR99 | |
| Obsolete | |
| BCV26E6327HTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Single | |
| 1 | |
| 30 | |
| 40 | |
| 10 | |
| 1.5@0.1mA@100mA | |
| 0.5 | |
| 0.1 | |
| 1@0.1mA@100mA | |
| 200 | |
| 10000@10mA@5V|20000@100mA@5V|4000@0.5A@5V|4000@100uA@1V | |
| 360 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Infineon Technologies brings you their latest PNP BCV26E6327HTSA1 Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 4000@100uA@1 V|10000@10mA@5V|20000@100mA@5V|4000@0.5A@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V.
| EDA / CAD Models |