Central SemiconductorBCV47 TR PBFREEDarlington BJT
Trans Darlington NPN 60V 0.5A 350mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
60 | |
80 | |
10 | |
1.5@0.1mA@100mA | |
0.5 | |
0.1 | |
1@0.1mA@100mA | |
220 | |
10000@100mA@5V|2000@1mA@5V|4000@10mA@5V | |
350 | |
-65 | |
150 | |
Tape and Reel | |
Installation | Surface Mount |
Hauteur du paquet | 0.99(Max) |
Largeur du paquet | 1.4(Max) |
Longueur du paquet | 3.05(Max) |
Carte électronique changée | 3 |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-23 |
3 | |
Forme de sonde | Gull-wing |
Central Semiconductor brings you their latest NPN BCV47 TR PBFREE Darlington transistor, a component that can easily provide you with much higher current gain values. This product's maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 2000@1mA@5 V|4000@10mA@5V|10000@100mA@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. This Darlington transistor array's maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. Its maximum power dissipation is 350 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V.