Infineon Technologies AGBCV61CE6327HTSA1GP BJT

Trans GP BJT NPN 30V 0.1A 300mW 4-Pin SOT-143 T/R Automotive AEC-Q101

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BCV61CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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      Date Code:
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      Chine
         
      • Price: $0.4687
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Prêt à être expédié dès aujourd'hui

      Ships from:
      États Unis
      Date Code:
      2213+
      Manufacturer Lead Time:
      4 semaines
      Country Of origin:
      Chine
      • In Stock: 9 000 pièces
      • Price: $0.4687
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      Ships from:
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      Date Code:
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      Country Of origin:
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      • In Stock: 3 000 pièces
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