Infineon Technologies AGBCW60BE6327HTSA1GP BJT
Trans GP BJT NPN 32V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| BCW60BE6327HTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 32 | |
| 32 | |
| 6 | |
| 0.85@0.25mA@10mA|1.05@1.25mA@50mA | |
| 0.25@0.25mA@10mA|0.55@1.25mA@50mA | |
| 0.1 | |
| 180@2mA@5V|20@10uA@5V|70@50mA@1V | |
| 330 | |
| 250(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Compared to other transistors, the NPN BCW60BE6327HTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |