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Diodes IncorporatedBCX5616TAGP BJT

Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R

Thanks to Diodes Zetex, your circuit can handle high levels of voltage using the NPN BCX5616TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.