Infineon Technologies AGBCX70JE6327HTSA1GP BJT
Trans GP BJT NPN 45V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 45 | |
| 45 | |
| 6 | |
| 0.85@0.25mA@10mA|1.05@1.25mA@50mA | |
| 0.25@0.25mA@10mA|0.55@1.25mA@50mA | |
| 0.1 | |
| 250@2mA@5V|40@10uA@5V|90@50mA@1V | |
| 330 | |
| 250(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
The versatility of this NPN BCX70JE6327HTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |