| RoHS (Union Européenne) | Compliant with Exemption |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.95 |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 11.1(Max) mm |
| Largeur du paquet | 3(Max) mm |
| Longueur du paquet | 7.8(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-225 |
| Décompte de broches | 3 |
| Forme de sonde | Through Hole |
The versatility of this PNP BD138G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1250 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
