Infineon Technologies AGBF1005E6327HTSA1RF MOSFET

Trans RF MOSFET N-CH 8V 0.025A Automotive AEC-Q101 4-Pin SOT-143 T/R

If you need a MOSFET for radio frequency environments, Infineon Technologies offers this BF1005E6327HTSA1 RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 200 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. Its maximum frequency is 1000 MHz. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.

A datasheet is only available for this product at this time.