NXP SemiconductorsBFU660F,115BJT FR
Trans RF BJT NPN 5.5V 0.06A 225mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75(Max) mm |
| Largeur du paquet | 1.35(Max) mm |
| Longueur du paquet | 2.2(Max) mm |
| Carte électronique changée | 4 |
| Nom de lemballage standard | DFP |
| Conditionnement du fournisseur | DFP |
| 4 | |
| Forme de sonde | Flat |
In addition to offering the benefits of traditional BJTs, the BFU660F,115 RF amplifier from NXP Semiconductors is perfect for high radio frequency power situations. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |