Diodes IncorporatedBSR43TAGP BJT
Trans GP BJT NPN 80V 1A 2100mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 90 | |
| 80 | |
| 5 | |
| 1.2@50mA@500mA|1@15mA@150mA | |
| 0.25@15mA@150mA|0.5@50mA@500mA | |
| 1 | |
| 100@100mA@5V|30@100uA@5V|50@500mA@5V | |
| 1000 | |
| 100(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 |
| Largeur du paquet | 2.5 |
| Longueur du paquet | 4.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 | |
| Forme de sonde | Flat |
Implement this versatile NPN BSR43TA GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |