STMicroelectronicsBU508AWGP BJT
Trans GP BJT NPN 700V 8A 125000mW 3-Pin(3+Tab) TO-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 700 | |
| 9 | |
| 1.1@2A@4.5A | |
| 1@1.6A@4.5A | |
| 8 | |
| 10@0.1A@5V|5@4.5A@5V | |
| 125000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 20.15(Max) |
| Largeur du paquet | 5.15(Max) |
| Longueur du paquet | 15.75(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Implement this versatile NPN BU508AW GP BJT from STMicroelectronics into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 700 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |