Taiwan SemiconductorBZW04-213B R0TVS
Diode TVS Single Bi-Dir 213V 400W 2-Pin DO-41 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Single | |
| Bi-Directional | |
| 1 | |
| 237 | |
| 344 | |
| 213 | |
| 40 | |
| 1.2 | |
| 1 | |
| 1 | |
| 400 | |
| -55 | |
| 175 | |
| Diamètre | 2.7(Max) |
| Installation | Through Hole |
| Longueur du paquet | 5.2(Max) |
| Carte électronique changée | 2 |
| Nom de lemballage standard | DO |
| Conditionnement du fournisseur | DO-41 |
| 2 | |
| Forme de sonde | Through Hole |
Prevent your circuits from experiencing malfunctions from electrostatic discharge with this BZW04-213B R0 TVS diode from Taiwan Semiconductor. This device's maximum clamping voltage is 344 V and minimum breakdown voltage is 237 V. Its test current is 1 mA. Its maximum leakage current is 1 μA. Its peak pulse power dissipation is 400(Min) W. This TVS diode has a minimum operating temperature of -65 °C and a maximum of 175 °C. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components.
| EDA / CAD Models |