| RoHS (Union Européenne) | Compliant |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 3.98(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| Décompte de broches | 8 |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD88537ND power MOSFET can provide a solution. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology.
