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Diodes IncorporatedFZT655TAGP BJT

Trans GP BJT NPN 150V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R

The NPN FZT655TA general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.

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239 pièces: Prêt à être expédié le lendemain

    Total$0.35Price for 1

    • Service Fee  $7.00

      Prêt à être expédié le lendemain

      Ships from:
      États Unis
      Date Code:
      2217+
      Manufacturer Lead Time:
      24 semaines
      Minimum Of :
      1
      Maximum Of:
      239
      Country Of origin:
      Chine
         
      • Price: $0.3497
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Prêt à être expédié le lendemain

      Ships from:
      États Unis
      Date Code:
      2217+
      Manufacturer Lead Time:
      24 semaines
      Country Of origin:
      Chine
      • In Stock: 239 pièces
      • Price: $0.3497