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Diodes IncorporatedFZT657TAGP BJT

Trans GP BJT NPN 300V 0.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN FZT657TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

A datasheet is only available for this product at this time.