Diodes IncorporatedFZT789AQTAGP BJT
Trans GP BJT PNP 25V 3A 3000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | Yes |
PPAP | Yes |
PNP | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
30 | |
25 | |
7 | |
1@10mA@1A | |
-55 to 150 | |
0.25@10mA@1A|0.45@20mA@2A|0.5@100mA@3A | |
3 | |
100 | |
100@6A@2V|200@2A@2V|250@1A@2V|300@10mA@2V | |
3000 | |
-55 | |
150 | |
Tape and Reel | |
Automotive | |
Installation | Surface Mount |
Hauteur du paquet | 1.6 |
Largeur du paquet | 3.5 |
Longueur du paquet | 6.5 |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | SOT |
Conditionnement du fournisseur | SOT-223 |
4 | |
Forme de sonde | Gull-wing |
Add switching and amplifying capabilities to your electronic circuit with this PNP FZT789AQTA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.