GeneSiC SemiconductorGAP3SLT33-214Rectifiers
Diode Schottky SiC 3.3KV 0.3A 2-Pin SMB
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| 10 | |
| Single | |
| Tension inverse CC maximale (V) | SiC |
| Active | |
| -55 | |
| -55 to 175 | |
| 0.3 | |
| 1.42°C/W | |
| 2.2 | |
| 175 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.24(Max) |
| Largeur du paquet | 3.94(Max) |
| Longueur du paquet | 4.57(Max) |
| Carte électronique changée | 2 |
| Nom de lemballage standard | DO |
| Conditionnement du fournisseur | SMB |
| 2 | |
| Forme de sonde | J-Lead |
Switch from an AC voltage to a DC voltage using a Schottky diode GAP3SLT33-214 rectifier from GeneSiC Semiconductor. Its maximum power dissipation is 25000 mW. Its peak non-repetitive surge current is 2 A, while its maximum continuous forward current is 0.3 A. It is made in a single configuration. This rectifier has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |