Infineon Technologies AGIGW25T120FKSA1Puce IGBT

Trans IGBT Chip N-CH 1200V 50A 190W 3-Pin(3+Tab) TO-247 Tube

Minimize the current at your gate with the IGW25T120FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 190000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

240 pièces: Livraison en 3 jours

    Total$2.57Price for 1

    • Livraison en 3 jours

      Ships from:
      Hong Kong
      Date Code:
      +
      Manufacturer Lead Time:
      0 semaines
      • In Stock: 240 pièces
      • Price: $2.57