Infineon Technologies AGIGW25T120FKSA1Puce IGBT
Trans IGBT Chip N-CH 1200V 50A 190W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 1.7 | |
| 50 | |
| 0.6 | |
| 190 | |
| -40 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 20.9 |
| Largeur du paquet | 5.3 |
| Longueur du paquet | 15.9 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Minimize the current at your gate with the IGW25T120FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 190000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
| EDA / CAD Models |