Infineon Technologies AGIKW25N120H3FKSA1Puce IGBT

Trans IGBT Chip N-CH 1200V 50A 326W 3-Pin(3+Tab) TO-247 Tube

This IKW25N120H3FKSA1 IGBT transistor from Infineon Technologies is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 326000 mW. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.

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