Infineon Technologies AGIKW50N65F5FKSA1Puce IGBT
Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 21.1(Max) |
| Largeur du paquet | 5.21(Max) |
| Longueur du paquet | 16.13(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
This IKW50N65F5FKSA1 IGBT transistor from Infineon Technologies will work perfectly in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 305000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C. It is made in a single configuration.
| EDA / CAD Models |