| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 21.45(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.24(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 | |
| Forme de sonde | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IXFH44N50P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 650000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
| EDA / CAD Models |