| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) mm |
| Largeur du paquet | 5.3(Max) mm |
| Longueur du paquet | 16.26(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 |
This IXGH32N170 IGBT transistor from Ixys Corporation is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |