IXYSIXGH48N60C3D1Puce IGBT

Trans IGBT Chip N-CH 600V 75A 300W 3-Pin(3+Tab) TO-247AD

You won't need to worry about any lagging in your circuit with this IXGH48N60C3D1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 300000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

A datasheet is only available for this product at this time.