IXYSIXYH82N120C3Puce IGBT
Trans IGBT Chip N-CH 1200V 200A 1250W 3-Pin(3+Tab) TO-247AD
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| 1200 | |
| ±20 | |
| 2.75 | |
| 200 | |
| 0.1 | |
| 1250 | |
| -55 | |
| 175 | |
| Installation | Through Hole |
| Hauteur du paquet | 21.46(Max) |
| Largeur du paquet | 5.3(Max) |
| Longueur du paquet | 16.26(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247AD |
| 3 |
You won't need to worry about any lagging in your circuit with this IXYH82N120C3 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 1250000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |