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Semicoa Semiconductors JAN2N3501 GP BJT
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39
Spécifications techniques du produit
| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Diamètre | 9.4(Max) |
| Installation | Through Hole |
| Hauteur du paquet | 6.6(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-39 |
| 3 | |
| Forme de sonde | Through Hole |
Thanks to Semicoa Semiconductors, your circuit can handle high levels of voltage using the NPN JAN2N3501 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Symboles et Empreintes
| EDA / CAD Models |
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