| RoHS (Union Européenne) | Compliant |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) |
| Largeur du paquet | 4.19(Max) |
| Longueur du paquet | 5.21(Max) |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| Décompte de broches | 3 |
This LND150N3-G-P003 power MOSFET from Microchip Technology can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 740 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in depletion mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
