STMicroelectronicsMD2009DFPBJT numérique
Trans Digital BJT NPN 700V 10mA 40000mW 3-Pin(3+Tab) TO-220FP Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 16.4(Max) |
| Largeur du paquet | 4.6(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the NPN MD2009DFP digital transistor from STMicroelectronics. This transistor's maximum base emitter saturation voltage is 1.3@1.4A@5.5A V. This product's maximum continuous DC collector current is 10000 mA, while its minimum DC current gain is 5@5.5A@5 V. It has a maximum collector emitter saturation voltage of 2.8@1.4A@5.5A V. It has a maximum collector emitter voltage of 700 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |