| RoHS (Union Européenne) | Compliant |
| ECCN (États-Unis) | EAR99 |
| Statut de pièce | Active |
| Code HTS | 8541.29.00.95 |
| Automotive | Unknown |
| PPAP | Unknown |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) |
| Largeur du paquet | 6.1 |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-252 |
| Conditionnement du fournisseur | DPAK |
| Décompte de broches | 3 |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of MagnaChip Semiconductor's MDD1901RH power MOSFET. Its maximum power dissipation is 70000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
