MagnaChip SemiconductorMDD1904RH
Trans MOSFET N-CH 100V 10.8A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Installation | Surface Mount |
| Hauteur du paquet | 2.39(Max) |
| Largeur du paquet | 6.1 |
| Longueur du paquet | 6.73(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO-252 |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The MDD1904RH power MOSFET from MagnaChip Semiconductor provides the solution. Its maximum power dissipation is 35800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |